IPI80P04P405AKSA1
MOSFET P-CH 40V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IPI80P04P405AKSA1 is an automotive-grade P-Channel Power MOSFET from the OptiMOS™ series. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C (Tc). The low on-resistance (Rds On) is specified as 5.2mOhm maximum at 80A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 125W (Tc), it is suitable for demanding applications. The device is housed in a PG-TO262-3-1 package, offering through-hole mounting. Key electrical parameters include a gate charge (Qg) of 151 nC maximum at 10V Vgs and input capacitance (Ciss) of 10300 pF maximum at 25V Vds. The operating temperature range is -55°C to 175°C (TJ). This component is qualified to AEC-Q101 standards and finds application in automotive power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO262-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 151 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10300 pF @ 25 V |
| Qualification | AEC-Q101 |
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