IPI80P03P4L07AKSA1
MOSFET P-CH 30V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series P-channel power MOSFET, part number IPI80P03P4L07AKSA1. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 80A at 25°C (Tc). The low on-resistance is specified as 7.2mOhm maximum at 80A and 10V gate-source voltage. With a maximum power dissipation of 88W (Tc), it is housed in a PG-TO262-3 package suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 80nC at 10V and input capacitance (Ciss) of 5700pF at 25V. This component is commonly utilized in automotive and industrial power management applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 130µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V |
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