IPI80P03P4L04AKSA1
MOSFET P-CH 30V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-Channel Power MOSFET, part number IPI80P03P4L04AKSA1, is designed for high-performance applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 80A at 25°C, with a maximum power dissipation of 137W (Tc). The low on-resistance (Rds On) of 4.4mOhm at 80A and 10V gate-source voltage (Vgs) makes it suitable for demanding power switching.
Key parameters include a gate charge (Qg) of 160 nC at 10V and input capacitance (Ciss) of 11300 pF at 25V. The operating temperature range is -55°C to 175°C (TJ). Packaged in a TO-262-3 (PG-TO262-3) through-hole configuration, this MOSFET is utilized in automotive, industrial power control, and server power supply sectors. It offers drive voltage flexibility with a maximum Vgs of -16V and a threshold voltage (Vgs(th)) of 2V at 253µA.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 137W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 253µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11300 pF @ 25 V |
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