IPI80N08S406AKSA1
MOSFET N-CH 80V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPI80N08S406AKSA1, features an 80V drain-source voltage and a continuous drain current of 80A at 25°C. This device boasts a low on-resistance of 5.8mOhm at 80A and 10V gate-source voltage, with a maximum power dissipation of 150W. The N-Channel MOSFET utilizes Metal Oxide technology and is presented in a PG-TO262-3-1 package with through-hole mounting. Key electrical parameters include a gate charge of 70 nC at 10V and input capacitance of 4800 pF at 25V. Designed for demanding applications, it operates across a temperature range of -55°C to 175°C and is qualified to AEC-Q101 standards, making it suitable for automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | PG-TO262-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
| Qualification | AEC-Q101 |
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