IPI80N06S4L05AKSA1
MOSFET N-CH 60V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPI80N06S4L05AKSA1, features a 60 V drain-source voltage and a continuous drain current of 80 A at 25°C. This device offers a low on-resistance of 5.1 mOhm at 80 A and 10 V Vgs, with a maximum power dissipation of 107 W. The gate charge is 110 nC at 10 V, and input capacitance (Ciss) is 8180 pF at 25 V. Operating across an extended temperature range from -55°C to 175°C, it is housed in a PG-TO262-3 package, also known as TO-262-3 Long Leads or I2PAK. This robust MOSFET is suitable for demanding applications in automotive, industrial power control, and power supply systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 60µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8180 pF @ 25 V |
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