IPI80N06S407AKSA1
MOSFET N-CH 60V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI80N06S407AKSA1 is an N-channel power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 79W (Tc). The low on-resistance (Rds On) of 7.4mOhm at 80A and 10V drive voltage, coupled with a gate charge (Qg) of 56 nC (Max) at 10V, ensures efficient switching performance.
The MOSFET utilizes advanced trench technology for optimized performance. It is housed in a PG-TO262-3 package with through-hole mounting. Key electrical characteristics include an input capacitance (Ciss) of 4500 pF (Max) at 25V and a gate-source threshold voltage (Vgs(th)) of 4V at 40µA. The operating temperature range is -55°C to 175°C (TJ). This device is suitable for applications in automotive, industrial power supplies, and high-power conversion systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 40µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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