IPI80N06S405AKSA1
MOSFET N-CH 60V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies delivers the OptiMOS™ series IPI80N06S405AKSA1, an N-Channel power MOSFET. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 107W (Tc). The device exhibits a low on-resistance (Rds On) of 5.7mOhm at 80A and 10V, facilitated by a gate-source voltage (Vgs) of 10V. Key parameters include a gate charge (Qg) of 81 nC at 10V and input capacitance (Ciss) of 6500 pF at 25V. Operating across a temperature range of -55°C to 175°C (TJ), this N-Channel MOSFET is housed in a TO-262-3 (PG-TO262-3) package with long leads. Its robust specifications make it suitable for applications in industrial automation and power supply designs.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 60µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF @ 25 V |
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