IPI80N06S3L06XK
MOSFET N-CH 55V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPI80N06S3L06XK, an N-Channel Power MOSFET from the OptiMOS™ series. This component features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 80 A at 25°C (Tc), with a maximum power dissipation of 136 W (Tc). The low on-resistance (Rds On) of 5.9 mOhm at 56 A and 10 V makes it suitable for demanding power applications. Key parameters include a gate charge (Qg) of 196 nC at 10 V and input capacitance (Ciss) of 9417 pF at 25 V. The device is housed in a PG-TO262-3 package with long leads, designed for through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). This robust MOSFET is utilized in industries such as automotive, industrial power control, and power supply applications where high efficiency and thermal performance are critical.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 56A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 80µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 196 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9417 pF @ 25 V |
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