IPI80N06S3L-08
MOSFET N-CH 55V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI80N06S3L-08 is an N-channel power MOSFET featuring a 55V drain-source voltage. This component offers a continuous drain current of 80A at 25°C (Tc) and a maximum power dissipation of 105W (Tc). The device exhibits a low on-resistance (Rds On) of 7.9mOhm at 43A and 10V. Key characteristics include a gate charge (Qg) of 134 nC at 10V and an input capacitance (Ciss) of 6475 pF at 25V. The IPI80N06S3L-08 is housed in a PG-TO262-3 package, suitable for through-hole mounting. This MOSFET is designed for applications in industrial power supplies, automotive systems, and power management solutions. It operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 105W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 55µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 134 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6475 pF @ 25 V |
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