IPI80N06S3-07
MOSFET N-CH 55V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI80N06S3-07 is an N-channel power MOSFET designed for high-current applications. This component features a drain-source breakdown voltage (Vdss) of 55V and a continuous drain current (Id) rating of 80A at 25°C. The low on-resistance (Rds On) is specified at a maximum of 6.8mOhm at 51A and 10V gate drive. With a maximum power dissipation of 135W (Tc), this MOSFET is suitable for demanding thermal environments. Key electrical characteristics include a gate charge (Qg) of 170 nC at 10V and input capacitance (Ciss) of 7768 pF at 25V. The device operates across a temperature range of -55°C to 175°C (TJ) and is housed in a PG-TO262-3 package with through-hole mounting. Applications for this MOSFET include automotive systems, industrial power supplies, and electric vehicle charging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 51A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 135W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 80µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7768 pF @ 25 V |
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