IPI80N06S3-05
MOSFET N-CH 55V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI80N06S3-05 is an N-Channel Power MOSFET designed for high-performance applications. This device features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 80 A at 25°C, with a maximum power dissipation of 165 W. The low on-resistance (Rds On) of 5.4 mOhm at 10 Vgs and 63 A Id ensures efficient power transfer. Key characteristics include a gate charge (Qg) of 240 nC at 10 V and input capacitance (Ciss) of 10760 pF at 25 V. The MOSFET utilizes advanced MOSFET technology and is housed in a TO-262-3 package, suitable for through-hole mounting. Operating temperature range is from -55°C to 175°C. This component is commonly employed in automotive, industrial, and power supply applications where robust power management is critical.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 63A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 165W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 110µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10760 pF @ 25 V |
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