IPI80N06S2L11AKSA1
MOSFET N-CH 55V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPI80N06S2L11AKSA1. This component features a 55 V drain-source breakdown voltage and a continuous drain current capability of 80 A at 25°C. The low on-resistance of 11 mOhm is achieved at 60 A and 10 V VGS, with a maximum power dissipation of 158 W. Designed with a through-hole mounting type in a PG-TO262-3 package, it offers a maximum gate-source voltage of ±20V and an operating temperature range of -55°C to 175°C. Key parameters include a gate charge of 80 nC and input capacitance of 2075 pF. This device is suitable for applications in automotive and industrial power systems requiring high current handling and efficient switching.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 93µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2075 pF @ 25 V |
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