IPI80N06S2L05AKSA2
MOSFET N-CH 55V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI80N06S2L05AKSA2 is an N-channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 80A at 25°C, with a maximum power dissipation of 300W (Tc). The low on-resistance (Rds On) of 4.8mOhm at 80A and 10V drive voltage, coupled with a low gate charge of 230 nC at 10V, ensures efficient switching.
The MOSFET utilizes advanced MOSFET technology and is housed in a PG-TO262-3-1 package, also known as TO-262-3 Long Leads or I2PAK, suitable for through-hole mounting. Its operating temperature range is from -55°C to 175°C (TJ). This component is widely adopted in automotive, industrial power supplies, and renewable energy systems where robust power handling and thermal management are critical. The maximum gate-source voltage is ±20V.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V |
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