IPI80N06S2L05AKSA1
MOSFET N-CH 55V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPI80N06S2L05AKSA1 is an N-channel Power MOSFET designed for high-performance applications. This device features a 55V drain-source voltage (Vdss) and a continuous drain current capability of 80A at 25°C (Tc). The low on-resistance (Rds On) of 4.8mOhm at 80A and 10V gate-source voltage (Vgs) ensures efficient power handling up to 300W (Tc). With a gate charge (Qg) of 230 nC at 10V and input capacitance (Ciss) of 5700 pF at 25V, it is suitable for demanding switching applications. The device utilizes advanced MOSFET technology and is packaged in a TO-262-3 (PG-TO262-3) through-hole configuration. This component is commonly employed in industrial power supplies, automotive systems, and electric vehicle charging infrastructure. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
