IPI80N06S207AKSA2
MOSFET N-CH 55V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies OptiMOS™ IPI80N06S207AKSA2 is an N-channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 250W (Tc). The Rds On (Max) is rated at 6.6mOhm at 68A and 10V gate drive. Key characteristics include a gate charge (Qg) of 110 nC (Max) at 10V and input capacitance (Ciss) of 3400 pF (Max) at 25V. It utilizes MOSFET technology and has a maximum gate-source voltage (Vgs) of ±20V. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a PG-TO262-3-1 package, suitable for through-hole mounting. This MOSFET is commonly found in power supply units, automotive applications, and industrial motor control systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 68A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 180µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V |
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