IPI80N04S404AKSA1
MOSFET N-CH 40V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI80N04S404AKSA1 is a N-Channel Power MOSFET designed for high-efficiency power conversion. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 80A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 4.6mOhm maximum at 80A and 10V, coupled with a gate charge (Qg) of 43 nC maximum at 10V. With a maximum power dissipation of 71W (Tc), it is suitable for demanding applications. The MOSFET is housed in a PG-TO262-3 package, facilitating through-hole mounting. Key parameters include an input capacitance (Ciss) of 3440 pF maximum at 25V and a gate-source voltage (Vgs) limit of ±20V. This device finds application in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 35µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3440 pF @ 25 V |
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