IPI80N04S306AKSA1
MOSFET N-CH 40V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPI80N04S306AKSA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C (Tc). With a low on-resistance (Rds On) of 5.7mOhm at 80A and 10V Vgs, it offers excellent conduction efficiency. The MOSFET supports a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 4V at 52µA. Key parameters include a gate charge (Qg) of 47 nC and input capacitance (Ciss) of 3250 pF. The device is housed in a PG-TO262-3 package, suitable for through-hole mounting, and can dissipate up to 100W (Tc). This component is utilized in applications such as automotive, industrial automation, and power supply systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 52µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 25 V |
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