IPI80N04S303AKSA1
MOSFET N-CH 40V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies N-Channel Power MOSFET, part number IPI80N04S303AKSA1, is a high-performance device from the OptiMOS™ series. This component features a 40 V drain-source voltage and offers a continuous drain current of 80A at 25°C (Tc). The device exhibits a low on-resistance of 3.5mOhm at 80A and 10V Vgs, with a maximum power dissipation of 188W (Tc). Designed for through-hole mounting, it is housed in a PG-TO262-3 package. Key electrical parameters include a gate charge of 110 nC at 10V and input capacitance of 7300 pF at 25V. This MOSFET is suitable for demanding applications in automotive, industrial, and power supply sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 120µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7300 pF @ 25 V |
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