IPI80N04S2H4AKSA2
MOSFET N-CH 40V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies, a leading manufacturer in advanced power management solutions, presents the IPI80N04S2H4AKSA2. This N-Channel MOSFET, part of the high-performance OptiMOS™ series, features a drain-source voltage of 40V and a continuous drain current capability of 80A at 25°C (Tc). With a low on-resistance of 3.7mOhm at 80A and 10V Vgs, it offers exceptional efficiency for demanding applications. The device is housed in a PG-TO262-3-1 package, facilitating through-hole mounting. Its robust thermal design allows for a maximum power dissipation of 300W (Tc) and operates across a wide temperature range of -55°C to 175°C. Key electrical characteristics include a gate charge of 148 nC (max) at 10V and input capacitance of 4400 pF (max) at 25V. This component is well-suited for power supply designs, automotive systems, and industrial motor control applications where high current handling and low conduction losses are critical.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 148 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
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