IPI80N04S204AKSA2
MOSFET N-CH 40V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI80N04S204AKSA2 is an N-Channel power MOSFET designed for high-efficiency power conversion applications. This component features a drain-source voltage (Vds) of 40 V and a continuous drain current (Id) of 80 A at 25°C, with a maximum power dissipation of 300 W (Tc). The low on-resistance of 3.7 mOhm at 80 A and 10 V gate drive voltage, coupled with a gate charge (Qg) of 170 nC at 10 V, ensures minimal conduction and switching losses.
The IPI80N04S204AKSA2 utilizes advanced MOSFET technology for superior performance in demanding applications. Its TO-262-3 Long Leads package (PG-TO262-3-1) facilitates through-hole mounting. This device is suitable for use in automotive, industrial power supplies, and motor control systems where robust performance and thermal management are critical. The operating temperature range is -55°C to 175°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V. Input capacitance (Ciss) is rated at 5300 pF at 25 V.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 25 V |
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