IPI80CN10N G
MOSFET N-CH 100V 13A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI80CN10N-G is an N-Channel Power MOSFET designed for efficient power conversion. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 13A at 25°C (Tc). The Rds(on) is specified at a maximum of 80mOhm at 13A and 10V gate drive.
With a maximum power dissipation of 31W (Tc), this MOSFET is suitable for demanding applications. Key characteristics include a Gate Charge (Qg) of 11 nC maximum at 10V and an Input Capacitance (Ciss) of 716 pF maximum at 50V. The device operates reliably across an extended temperature range of -55°C to 175°C (TJ).
The IPI80CN10N-G is housed in a PG-TO262-3 package, facilitating through-hole mounting. This Infineon Technologies MOSFET is commonly utilized in power supply units, motor control, and industrial automation systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 12µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 716 pF @ 50 V |
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