IPI70N12S3L12AKSA1
MOSFET N-CHANNEL_100+Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPI70N12S3L12AKSA1 is a high-performance N-channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 120V and a continuous drain current (Id) capability of 70A at 25°C (Tc). With a maximum power dissipation of 125W (Tc), it effectively manages thermal loads. The low on-resistance (Rds On) of 12.1mOhm at 70A and 10V gate drive, coupled with a gate charge (Qg) of 77 nC at 10V, ensures efficient switching performance. This device utilizes MOSFET technology and is qualified to AEC-Q101 standards, making it suitable for automotive and industrial power conversion systems. The through-hole mounting type, specifically the PG-TO262-3-1 package, facilitates robust PCB integration. Operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.1mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 83µA |
| Supplier Device Package | PG-TO262-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5550 pF @ 25 V |
| Qualification | AEC-Q101 |
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