IPI70N10S3L12AKSA1
MOSFET N-CH 100V 70A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI70N10S3L12AKSA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 70A at 25°C, with a maximum power dissipation of 125W (Tc). The On-Resistance (Rds On) is rated at a maximum of 12.1mOhm at 70A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 80 nC @ 10V and Input Capacitance (Ciss) of 5550 pF @ 25V. The device operates across an extended temperature range of -55°C to 175°C (TJ). Packaged in a PG-TO262-3 case with through-hole mounting, this MOSFET is suitable for applications in automotive, industrial power supplies, and motor control systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.1mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 83µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5550 pF @ 25 V |
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