IPI70N10S312AKSA1
MOSFET N-CH 100V 70A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPI70N10S312AKSA1, offers robust performance with a 100 V drain-source voltage and 70 A continuous drain current at 25°C (Tc). This through-hole component, housed in a PG-TO262-3 package, features a low on-resistance of 11.6 mOhm at 70 A and 10 V, coupled with a maximum power dissipation of 125 W (Tc). Key parameters include a gate charge of 66 nC at 10 V and input capacitance of 4355 pF at 25 V. The device operates within a temperature range of -55°C to 175°C (TJ) and has a Vgs(th) of 4V at 83µA. This MOSFET is suitable for various industrial applications including power supplies, automotive systems, and motor control.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.6mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 83µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4355 pF @ 25 V |
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