IPI70N04S406AKSA1
MOSFET N-CH 40V 70A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI70N04S406AKSA1 is an N-Channel Power MOSFET designed for high-performance applications. This component features a 40V drain-source voltage and a continuous drain current capability of 70A at 25°C, with a maximum power dissipation of 58W. The device exhibits a low on-resistance of 6.5mOhm at 70A and 10V gate-source voltage. Its input capacitance (Ciss) is rated at 2550pF, and gate charge (Qg) is 32nC at 10V. The MOSFET is housed in a PG-TO262-3 package, suitable for through-hole mounting. The operating temperature range is from -55°C to 175°C. This component is commonly utilized in automotive, industrial power control, and server power supply applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 26µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2550 pF @ 25 V |
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