IPI70N04S307AKSA1
MOSFET N-CH 40V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI70N04S307AKSA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C. The low on-resistance (Rds On) of 6.5mOhm at 70A and 10V gate drive ensures high efficiency. With a maximum power dissipation of 79W (Tc) and an operating junction temperature range from -55°C to 175°C, it is suitable for high-power switching and motor control applications. The device is housed in a TO-262-3 package, facilitating through-hole mounting. Key parameters include a gate charge (Qg) of 40 nC at 10V and input capacitance (Ciss) of 2700 pF at 25V. This MOSFET is utilized across various industrial sectors, including automotive and power supply design.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
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