IPI65R660CFDXKSA1
MOSFET N-CH 650V 6A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ series N-Channel Power MOSFET, part number IPI65R660CFDXKSA1. This device features a 650V drain-source breakdown voltage and a continuous drain current of 6A at 25°C (Tc). The low on-resistance is specified at 660mOhm maximum at 2.1A and 10V gate-source voltage. Designed for through-hole mounting within a PG-TO262-3 package, this component offers a maximum power dissipation of 62.5W (Tc). Key parameters include a gate charge of 22nC (max) at 10V and input capacitance of 615pF (max) at 100V. Typical applications for this component span high-voltage power conversion systems in consumer electronics, industrial power supplies, and lighting.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 615 pF @ 100 V |