IPI65R420CFDXKSA1
MOSFET N-CH 650V 8.7A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPI65R420CFDXKSA1, offers a 650V drain-source voltage and 8.7A continuous drain current at 25°C. This through-hole component features a low Rds(on) of 420mOhm at 3.4A and 10V Vgs, with a maximum gate charge of 32nC at 10V. The input capacitance (Ciss) is a maximum of 870pF at 100V. Designed for efficient power conversion, this device dissipates up to 83.3W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). The PG-TO262-3 package with long leads ensures robust thermal performance. This MOSFET is suitable for applications in power factor correction, switch mode power supplies, and industrial power systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83.3W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 340µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 100 V |