IPI65R380C6XKSA1
MOSFET N-CH 650V 10.6A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPI65R380C6XKSA1, offers 650 V drain-source voltage and a continuous drain current of 10.6 A at 25°C. This device features a maximum on-resistance of 380 mOhm at 3.2 A and 10 V gate-source voltage. Key parameters include a gate charge of 39 nC and input capacitance of 710 pF at 100 V. The power dissipation is rated at 83 W. Packaged in a PG-TO262-3 and designed for through-hole mounting, this MOSFET operates across a temperature range of -55°C to 150°C. It is suitable for applications in industrial power supplies, server power, and solar inverters.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 320µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V |
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