IPI65R310CFDXKSA1
MOSFET N-CH 650V 11.4A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPI65R310CFDXKSA1, offers a 650V drain-source breakdown voltage and a continuous drain current of 11.4A at 25°C (Tc). This device features a low on-resistance of 310mOhm maximum at 4.4A and 10V Vgs. With a maximum power dissipation of 104.2W (Tc), it is packaged in a PG-TO262-3 configuration suitable for through-hole mounting. Key characteristics include a gate charge of 41nC (max) at 10V and input capacitance of 1100pF (max) at 100V. The operating temperature range is -55°C to 150°C (TJ). This component is utilized in power supply units, server power, and industrial applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 310mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104.2W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 440µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |