IPI65R280E6XKSA1
MOSFET N-CH 650V 13.8A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ E6 series N-Channel Power MOSFET, part number IPI65R280E6XKSA1. This device features a 650V drain-source voltage and a continuous drain current of 13.8A at 25°C (Tc). The Rds(on) is specified at 280mOhm maximum at 4.4A and 10V gate-source voltage. With a maximum power dissipation of 104W (Tc) and a gate charge of 45 nC at 10V, it offers efficient switching performance. The input capacitance (Ciss) is 950pF maximum at 100V. This component is housed in a PG-TO262-3-1 package, suitable for through-hole mounting. Typical applications include power supply units and server power.
Additional Information
Series: CoolMOS™ E6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
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