IPI65R190CFDXKSA2
MOSFET N-CH 650V 17.5A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CFD2 series N-Channel Power MOSFET, part number IPI65R190CFDXKSA2. This device features a drain-source voltage of 650 V and a continuous drain current of 17.5 A at 25°C (Tc). The low on-resistance is specified at 190 mOhm at 7.3 A and 10 V gate-source voltage. Key parameters include a gate charge of 68 nC (max) at 10 V and an input capacitance of 1850 pF (max) at 100 V. With a maximum power dissipation of 151 W (Tc), this MOSFET is housed in a PG-TO262-3 package suitable for through-hole mounting. Its robust design supports a wide operating temperature range from -55°C to 150°C (TJ). This component is utilized in applications such as high voltage power supplies, server power, and solar inverters.
Additional Information
Series: CoolMOS™ CFD2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 700µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 100 V |
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