IPI65R190C6XKSA1
MOSFET N-CH 650V 20.2A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPI65R190C6XKSA1, an N-Channel CoolMOS™ MOSFET designed for high-performance power applications. This through-hole component features a Drain-Source Voltage (Vdss) of 650 V and a continuous drain current (Id) of 20.2 A at 25°C (Tc), with a maximum power dissipation of 151 W (Tc). The Rds On is specified at a maximum of 190 mOhm at 7.3 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 73 nC at 10 V and input capacitance (Ciss) of 1620 pF at 100 V. The device operates within a temperature range of -55°C to 150°C (TJ) and is supplied in a PG-TO262-3 package. This MOSFET is suitable for use in power supply units, industrial applications, and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 730µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 100 V |
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