IPI65R150CFDXKSA1
MOSFET N-CH 650V 22.4A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPI65R150CFDXKSA1 is a CoolMOS™ N-channel power MOSFET. This component features a drain-source breakdown voltage of 650V and a continuous drain current of 22.4A at 25°C (Tc). The device exhibits a maximum on-resistance of 150mOhms at 9.3A and 10V gate-source voltage. Key parameters include a gate charge of 86nC (max) at 10V and an input capacitance of 2340pF (max) at 100V. The power dissipation is rated at 195.3W (Tc). Packaged in a PG-TO262-3-1 (TO-262-3 Long Leads) through-hole configuration, this MOSFET is designed for applications in power factor correction, switch-mode power supplies, and industrial motor control. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 9.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 195.3W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 900µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 100 V |
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