IPI65R110CFDXKSA1
MOSFET N-CH 650V 31.2A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ series IPI65R110CFDXKSA1 is an N-Channel Power MOSFET featuring a Drain-Source Voltage (Vdss) of 650 V. This device offers a continuous drain current (Id) of 31.2 A at 25°C (Tc) and a maximum power dissipation of 277.8 W (Tc). The Rds On is specified at 110 mOhm maximum at 12.7 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 118 nC at 10 V and an input capacitance (Ciss) of 3240 pF at 100 V. The MOSFET is housed in a PG-TO262-3 package with through-hole mounting. This component is suitable for applications in high-voltage power conversion, including server power supplies and industrial power systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 277.8W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.3mA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 100 V |