IPI65R099C6XKSA1
MOSFET N-CH 650V 38A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the IPI65R099C6XKSA1, a 650V N-Channel Power MOSFET from the CoolMOS™ series. This component features a low on-resistance of 99mOhm at 12.8A and 10V Vgs, with a continuous drain current capability of 38A at 25°C. Designed for high-efficiency power conversion, it offers a maximum power dissipation of 278W. The IPI65R099C6XKSA1 is housed in a PG-TO262-3-1 (TO-262-3 Long Leads) package, suitable for through-hole mounting. Key parameters include a gate charge of 127 nC at 10V and an input capacitance of 2780 pF at 100V. This device is widely utilized in power supply units, server and telecom power, industrial power applications, and renewable energy systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 12.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 127 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2780 pF @ 100 V |
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