IPI60R600CPAKSA1
MOSFET N-CH 600V 6.1A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPI60R600CPAKSA1, features a 600V breakdown voltage and a continuous drain current capability of 6.1A at 25°C (Tc). This device offers a maximum on-resistance of 600mOhm at 3.3A and 10V gate-source voltage. With a gate charge of 27nC at 10V and input capacitance of 550pF at 100V, it is designed for efficient switching applications. The IPI60R600CPAKSA1 is housed in a PG-TO262-3 package with through-hole mounting and a maximum power dissipation of 60W (Tc). This component is suitable for use in power supply units, lighting, and industrial applications requiring robust high-voltage switching. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 220µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 100 V |
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