IPI60R520CPAKSA1
MOSFET N-CH 600V 6.8A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IPI60R520CPAKSA1 is a 600V N-Channel CoolMOS™ Power MOSFET designed for high-efficiency power conversion applications. This device features a low on-resistance of 520mOhm at 3.8A and 10V Vgs, enabling reduced conduction losses. With a continuous drain current capability of 6.8A (Tc) and a maximum power dissipation of 66W (Tc), it is suitable for demanding power supply designs. Key parameters include a gate charge of 31 nC (max) at 10V and input capacitance of 630 pF (max) at 100V, facilitating efficient switching performance. The MOSFET is housed in a TO-262-3 (PG-TO262-3) package, facilitating through-hole mounting. This component finds application in power factor correction, LED lighting, and server power supplies.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 340µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 100 V |
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