IPI60R385CPXKSA1
MOSFET N-CH 650V 9A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPI60R385CPXKSA1 is a 650V N-Channel CoolMOS™ power MOSFET. This component features a low Rds(on) of 385mOhm at 5.2A and 10V Vgs, ensuring efficient power conversion. With a continuous drain current capacity of 9A at 25°C and a maximum power dissipation of 83W, it is suitable for high-power applications. The device offers a gate charge of 22nC at 10V and an input capacitance of 790pF at 100V, contributing to fast switching performance. The PG-TO262-3 package with long leads facilitates through-hole mounting. This MOSFET is commonly utilized in power supply units, server power, industrial power supplies, and solar inverters. Operating temperature range is -55°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 385mOhm @ 5.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 340µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 100 V |
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