IPI60R380C6XKSA1
MOSFET N-CH 600V 10.6A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPI60R380C6XKSA1, offers a 600V drain-source voltage and a continuous drain current of 10.6A at 25°C (Tc). This device features a maximum on-resistance of 380mOhm at 3.8A and 10V Vgs, with a gate charge of 32 nC at 10V. The input capacitance (Ciss) is a maximum of 700pF at 100V. Designed for through-hole mounting, it is housed in a PG-TO262-3 package (TO-262-3 Long Leads, I2PAK, TO-262AA) and can operate across a temperature range of -55°C to 150°C (TJ). The maximum power dissipation is 83W (Tc). This component is suitable for applications in power supply units and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 320µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 100 V |
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