IPI60R299CPXKSA1
MOSFET N-CH 600V 11A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel Power Transistor, part number IPI60R299CPXKSA1, offers a 600V drain-source breakdown voltage and continuous drain current capability of 11A at 25°C (Tc). This device features a low on-resistance of 299mOhm at 6.6A and 10V Vgs, with a maximum power dissipation of 96W (Tc). The gate charge is specified at 29 nC (max) at 10V, and input capacitance (Ciss) is 1100 pF (max) at 100V. The IPI60R299CPXKSA1 is housed in a PG-TO262-3 package suitable for through-hole mounting and operates across an extended temperature range of -55°C to 150°C (TJ). This component is utilized in applications such as power factor correction (PFC) and switch-mode power supplies (SMPS).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
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