IPI60R250CPAKSA1
MOSFET N-CH 650V 12A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPI60R250CPAKSA1 is a 650 V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a low Rds(on) of 250mOhm at 7.8A and 10V Vgs, enabling reduced conduction losses. With a continuous drain current of 12A (Tc) and a maximum power dissipation of 104W (Tc), it is suitable for demanding power supplies, server applications, and industrial motor control. The device utilizes a TO-262-3 package for through-hole mounting, offering robust thermal performance. Key parameters include a gate charge of 35 nC (Max) @ 10V and input capacitance of 1200 pF (Max) @ 100V, facilitating efficient switching. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 100 V |
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