IPI60R165CPXKSA1
HIGH POWER_LEGACYManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 600 V 21A (Tc) 192W (Tc) Through Hole PG-TO262-3-1
Additional Information
Series: CoolMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 790µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V |
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