IPI60R165CPAKSA1
MOSFET N-CH 650V 21A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPI60R165CPAKSA1 is a 650V N-channel Power MOSFET from the CoolMOS™ series, packaged in a PG-TO262-3 (TO-262-3 Long Leads) through-hole configuration. This device offers a continuous drain current of 21A (Tc) at 25°C and a maximum power dissipation of 192W (Tc). Key electrical characteristics include a low Rds On of 165mOhm at 12A, 10V and a gate charge (Qg) of 52 nC at 10V. Input capacitance (Ciss) is rated at 2000 pF maximum at 100V. The operating temperature range is -55°C to 150°C (TJ). This component is widely utilized in power factor correction (PFC), switch-mode power supplies (SMPS), and server power applications.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 790µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V |
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