IPI60R099CPAAKSA1
MOSFET N-CH 600V 31A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPI60R099CPAAKSA1 is a 600V N-channel power MOSFET from the CoolMOS™ series. This component features a continuous drain current of 31A at 25°C and a maximum power dissipation of 255W at the same temperature. The Rds(on) is specified at 105mOhm maximum at 18A and 10V gate-source voltage. With a low gate charge of 80 nC at 10V and input capacitance of 2800 pF at 100V, this device is designed for efficient switching applications. The IPI60R099CPAAKSA1 is provided in a PG-TO262-3 package for through-hole mounting. This MOSFET is suitable for use in high-voltage power supply, server, and industrial applications. Operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 255W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 100 V |
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