IPI600N25N3GAKSA1
MOSFET N-CH 250V 25A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ IPI600N25N3GAKSA1 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 250V drain-source voltage (Vdss) and a continuous drain current capability of 25A at 25°C (Tc), with a maximum power dissipation of 136W (Tc). The device exhibits a low on-resistance (Rds On) of 60mOhm at 25A and 10V (Vgs), ensuring efficient power transfer. Key parameters include a gate charge (Qg) of 29 nC at 10V and input capacitance (Ciss) of 2350 pF at 100V (Vds). The IPI600N25N3GAKSA1 is housed in a PG-TO262-3 package, facilitating through-hole mounting and suitable for thermal management in power conversion and motor control systems across various industrial sectors. It operates within an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2350 pF @ 100 V |