IPI530N15N3GXKSA1
MOSFET N-CH 150V 21A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPI530N15N3GXKSA1. This through-hole component features a 150V drain-source voltage and a continuous drain current of 21A at 25°C (Tc). The N-channel MOSFET exhibits a maximum on-resistance of 53mOhm at 18A and 10V gate-source voltage, with a typical gate charge of 12 nC at 10V. Designed for efficient power management, it offers a maximum power dissipation of 68W at 25°C (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). The device is housed in a PG-TO262-3 package, also known as TO-262-3 Long Leads or I2PAK. This component is suitable for applications in the automotive and industrial sectors demanding robust power switching performance.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 35µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 887 pF @ 75 V |