IPI50R350CP
MOSFET N-CH 550V 10A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPI50R350CP, a CoolMOS™ N-Channel Power MOSFET. This component features a Drain-to-Source Voltage (Vdss) of 550V and a continuous Drain Current (Id) of 10A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 350mOhm maximum at 5.6A and 10V Vgs. With a maximum power dissipation of 89W (Tc), it is suitable for demanding applications. Key parameters include a Gate Charge (Qg) of 25 nC maximum at 10V Vgs and an Input Capacitance (Ciss) of 1020 pF maximum at 100V Vds. The IPI50R350CP is housed in a TO-262-3 (PG-TO262-3) package for through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is widely utilized in power supply units, lighting, and industrial applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 370µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 100 V |
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