IPI50R140CPXKSA1
HIGH POWER_LEGACYManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies OptiMOS® N-Channel Power MOSFET, part number IPI50R140CPXKSA1, is a high-performance component designed for demanding power applications. Featuring a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 23A at 25°C (Tc), this device offers a maximum on-resistance (Rds On) of 140mOhm at 14A and 10V gate drive. Its robust design includes a gate charge (Qg) of 64 nC at 10V and input capacitance (Ciss) of 2540 pF at 100V. The power dissipation (Pd) is rated at 192W (Tc), and it operates across a junction temperature range of -55°C to 150°C. Packaged in a TO-262-3 Long Leads (PG-TO262-3-1) through-hole configuration, this MOSFET is suitable for use in industrial and high-power switching applications.
Additional Information
Series: OptiMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 930µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2540 pF @ 100 V |
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