IPI50N12S3L15AKSA1
MOSFET N-CHANNEL_100+Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPI50N12S3L15AKSA1. This AEC-Q101 qualified component features a 120V drain-source breakdown voltage and a continuous drain current capability of 50A at 25°C (Tc), with a maximum power dissipation of 100W (Tc). The on-resistance (Rds On) is specified at a maximum of 15.7mOhm at 50A and 10V gate-source voltage. Designed with a gate charge of 57nC (max) at 10V, it operates with gate-source voltages up to ±20V. The threshold voltage (Vgs(th)) is 2.4V (max) at 60µA. This through-hole mounted device utilizes the PG-TO262-3-1 package, also known as TO-262-3 Long Leads or I2PAK. Its operating temperature range is -55°C to 175°C (TJ). This component is suitable for automotive applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 60µA |
| Supplier Device Package | PG-TO262-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4180 pF @ 25 V |
| Qualification | AEC-Q101 |
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